IRFB3207ZGPBF Infineon Technologies

Description: MOSFET N-CH 75V 120A TO220AB, Vgs (Max): ±20V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 150µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 6920 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V.