IRFB3256PBF

IRFB3256PBF Infineon Technologies


IRSDS13224-1.pdf?t.download=true&u=5oefqw Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 75A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 48 V
auf Bestellung 1449 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
189+2.58 EUR
Mindestbestellmenge: 189
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IRFB3256PBF Infineon Technologies

Description: MOSFET N-CH 60V 75A TO220AB, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 75A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 48 V.

Weitere Produktangebote IRFB3256PBF nach Preis ab 2.99 EUR bis 5.77 EUR

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IRFB3256PBF IRFB3256PBF Hersteller : Infineon Technologies Infineon_IRFB3256_DataSheet_v01_01_EN-1732504.pdf MOSFET MOSFET, 60V, 210A, 3 130 nC Qg, TO-220AB
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.77 EUR
10+5.19 EUR
100+4.26 EUR
500+3.63 EUR
1000+3.17 EUR
2000+2.99 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3256PBF IRFB3256PBF Hersteller : ROCHESTER ELECTRONICS IRSDS13224-1.pdf?t.download=true&u=5oefqw Description: ROCHESTER ELECTRONICS - IRFB3256PBF - IRFB3256 12V-300V N-CHANNEL POWER MOSFET
tariffCode: 85412900
euEccn: NLR
hazardous: false
rohsCompliant: YES
productTraceability: No
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
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IRFB3256PBF IRFB3256PBF Hersteller : Infineon Technologies infineon-irfb3256-datasheet-v01_01-en.pdf Trans MOSFET N-CH 60V 206A 3-Pin(3+Tab) TO-220AB Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3256PBF IRFB3256PBF Hersteller : Infineon Technologies IRSDS13224-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 48 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH