IRFB3256PBF Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 219+ | 2.98 EUR |
| 500+ | 2.78 EUR |
| 1000+ | 2.56 EUR |
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Technische Details IRFB3256PBF Infineon Technologies
Description: IRFB3256 - 12V-300V N-CHANNEL PO, Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 48 V, Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 150µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk.
Weitere Produktangebote IRFB3256PBF nach Preis ab 2.56 EUR bis 3.31 EUR
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IRFB3256PBF | Infineon Technologies |
 Trans MOSFET N-CH 60V 206A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 347 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB3256PBF | Infineon Technologies |
Trans MOSFET N-CH 60V 206A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB3256PBF | International Rectifier |
Description: IRFB3256 - 12V-300V N-CHANNEL PO Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 48 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 150µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFB3256PBF | ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IRFB3256PBF - IRFB3256 12V-300V N-CHANNEL POWER MOSFET tariffCode: 85412900 euEccn: NLR hazardous: false rohsCompliant: YES productTraceability: No rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 180 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 180 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| IRFB3256PBF | International Rectifier HiRel Products |
Trans MOSFET N-CH 60V 206A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 380 Stücke: Lieferzeit 14-21 Tag (e) |
|
| IRFB3256PBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 206A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 60V 206A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 347 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 219+ | 2.98 EUR |
| IRFB3256PBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 206A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 60V 206A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 219+ | 2.98 EUR |
| 500+ | 2.78 EUR |
| 1000+ | 2.56 EUR |
| IRFB3256PBF |
|
Hersteller: International Rectifier
Description: IRFB3256 - 12V-300V N-CHANNEL PO
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 48 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Description: IRFB3256 - 12V-300V N-CHANNEL PO
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 48 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 167+ | 3.31 EUR |
| IRFB3256PBF |
|
Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - IRFB3256PBF - IRFB3256 12V-300V N-CHANNEL POWER MOSFET
tariffCode: 85412900
euEccn: NLR
hazardous: false
rohsCompliant: YES
productTraceability: No
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
Description: ROCHESTER ELECTRONICS - IRFB3256PBF - IRFB3256 12V-300V N-CHANNEL POWER MOSFET
tariffCode: 85412900
euEccn: NLR
hazardous: false
rohsCompliant: YES
productTraceability: No
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFB3256PBF |
|
Hersteller: International Rectifier HiRel Products
Trans MOSFET N-CH 60V 206A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 60V 206A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 380 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 219+ | 2.98 EUR |