Technische Details IRFB3307PBF Infineon Technologies
Description: MOSFET N-CH 75V 130A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 75A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V.
Weitere Produktangebote IRFB3307PBF nach Preis ab 0.97 EUR bis 5.16 EUR
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IRFB3307PBF | Infineon Technologies |
 Trans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 14900 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB3307PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 130A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 6.3mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1268 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB3307PBF | Infineon Technologies |
Trans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 14900 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB3307PBF | Infineon Technologies |
MOSFETs MOSFT 75V 120A 6.3mOhm 120nC |
auf Bestellung 1164 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFB3307PBF | Infineon Technologies |
Description: MOSFET N-CH 75V 130A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 75A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V |
auf Bestellung 786 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFB3307PBF |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 14900 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 77+ | 1.92 EUR |
| IRFB3307PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1268 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 24+ | 3.03 EUR |
| 26+ | 2.77 EUR |
| 28+ | 2.57 EUR |
| 37+ | 1.94 EUR |
| 44+ | 1.64 EUR |
| 54+ | 1.34 EUR |
| 100+ | 1.26 EUR |
| IRFB3307PBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 14900 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 41+ | 3.59 EUR |
| 63+ | 2.26 EUR |
| 100+ | 1.59 EUR |
| 500+ | 1.35 EUR |
| 1000+ | 1.06 EUR |
| 2000+ | 0.97 EUR |
| IRFB3307PBF |
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Hersteller: Infineon Technologies
MOSFETs MOSFT 75V 120A 6.3mOhm 120nC
MOSFETs MOSFT 75V 120A 6.3mOhm 120nC
auf Bestellung 1164 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.44 EUR |
| 10+ | 2.32 EUR |
| 100+ | 1.71 EUR |
| 500+ | 1.47 EUR |
| 1000+ | 1.42 EUR |
| IRFB3307PBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V
Description: MOSFET N-CH 75V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V
auf Bestellung 786 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.16 EUR |
| 10+ | 3.33 EUR |
| 100+ | 2.29 EUR |
| 500+ | 1.84 EUR |