auf Bestellung 859 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.15 EUR |
| 10+ | 1.46 EUR |
| 100+ | 1.02 EUR |
| 500+ | 0.92 EUR |
| 1000+ | 0.83 EUR |
| 2000+ | 0.82 EUR |
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Technische Details IRFB4019PBFXKMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 10V, Power Dissipation (Max): 80W (Tj), Vgs(th) (Max) @ Id: 4.9V @ 50µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IRFB4019PBFXKMA1 | Hersteller : Infineon Technologies |
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| IRFB4019PBFXKMA1 | Hersteller : Infineon Technologies |
IRFB4019PBFXKMA1 |
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IRFB4019PBFXKMA1 | Hersteller : Infineon Technologies |
Description: TRENCH >=100V Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 10V Power Dissipation (Max): 80W (Tj) Vgs(th) (Max) @ Id: 4.9V @ 50µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V |
Produkt ist nicht verfügbar |