IRFB4410ZGPBF International Rectifier
Hersteller: International RectifierDescription: IRFB4410 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 50+ | 2.17 EUR |
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Technische Details IRFB4410ZGPBF International Rectifier
Description: MOSFET N-CH 100V 97A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 97A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V.
Weitere Produktangebote IRFB4410ZGPBF nach Preis ab 2.49 EUR bis 2.49 EUR
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IRFB4410ZGPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 100V 97A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB4410ZGPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 100V 97A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 25000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB4410ZGPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 100V 97A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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IRFB4410ZGPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 97A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V |
Produkt ist nicht verfügbar |
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IRFB4410ZGPBF | Hersteller : Infineon Technologies |
MOSFETs MOSFT 100V 97A 9mOhm 83nC |
Produkt ist nicht verfügbar |