IRFB59N10DPBF

Hersteller: International Rectifier
TO-220AB Транзистори

Hersteller: International Rectifier/Infineon
N-канальний ПТ, Udss, В = 100, Id = 59 А, Ptot, Вт = 3,8, Тип монт. = вивідний, Ciss, пФ @ Uds, В = 2450 @ 25, Qg, нКл = 114 @ 10 В, Rds = 25 мОм @ 35,4 A, 10 В, Tексп, °C = -55...+175, Ugs(th) = 5,5 В @ 250 мкА,... Транзистори Корпус: TO-220AB Од. вим: ш
Anzahl je Verpackung: 50 Stücke

Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 59A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 35.4A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V

Hersteller: Infineon Technologies
MOSFET MOSFT 100V 59A 25mOhm 76nC