IRFB7446GPBF Infineon Technologies
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 323+ | 1.68 EUR |
| 500+ | 1.46 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFB7446GPBF Infineon Technologies
Description: IRFB7446 - POWER MOSFET, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V, Power Dissipation (Max): 99W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 100µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V.
Weitere Produktangebote IRFB7446GPBF nach Preis ab 1.76 EUR bis 1.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
 |
IRFB7446GPBF | Hersteller : International Rectifier |
 Description: IRFB7446 - POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V Power Dissipation (Max): 99W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V |
auf Bestellung 1157 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||
 |
IRFB7446GPBF | Hersteller : Infineon Technologies |
MOSFET MOSFET, 40V, 118A, 3 62 nC Qg, TO-220AB |
auf Bestellung 996 Stücke: Lieferzeit 10-14 Tag (e) |
|||||
 |
IRFB7446GPBF | Hersteller : Infineon Technologies |
Description: MOSFET N CH 40V 120A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V Power Dissipation (Max): 99W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V |
Produkt ist nicht verfügbar |