auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 105+ | 1.48 EUR |
| 250+ | 1.3 EUR |
| 500+ | 1.17 EUR |
| 750+ | 1.06 EUR |
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Technische Details IRFBE20PBF-BE3 Vishay
Description: MOSFET N-CH 800V 1.8A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc), Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1.1A, 10V, Power Dissipation (Max): 54W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V.
Weitere Produktangebote IRFBE20PBF-BE3 nach Preis ab 1.1 EUR bis 2.46 EUR
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IRFBE20PBF-BE3 | Hersteller : Vishay / Siliconix |
 MOSFET 800V N-CH HEXFET |
auf Bestellung 997 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFBE20PBF-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 800V 1.8A |
Produkt ist nicht verfügbar |
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IRFBE20PBF-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 800V 1.8A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1.1A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V |
Produkt ist nicht verfügbar |