IRFBE30LPBF Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 800V 4.1A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 968 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.58 EUR |
| 50+ | 2.49 EUR |
| 100+ | 2.41 EUR |
| 500+ | 2.04 EUR |
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Technische Details IRFBE30LPBF Vishay Siliconix
Description: MOSFET N-CH 800V 4.1A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: I2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V.
Weitere Produktangebote IRFBE30LPBF nach Preis ab 2.01 EUR bis 4.86 EUR
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IRFBE30LPBF | Hersteller : Vishay Semiconductors |
MOSFETs N-Chan 800V 4.1 Amp |
auf Bestellung 18461 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFBE30LPBF | Hersteller : Vishay |
Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-262 |
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IRFBE30LPBF | Hersteller : Vishay |
Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-262 |
Produkt ist nicht verfügbar |
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IRFBE30LPBF | Hersteller : Vishay |
Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-262 |
Produkt ist nicht verfügbar |
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| IRFBE30LPBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.1A; Idm: 16A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.1A Pulsed drain current: 16A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| IRFBE30LPBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.1A; Idm: 16A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.1A Pulsed drain current: 16A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |