auf Bestellung 4700 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 67+ | 2.17 EUR |
| 90+ | 1.56 EUR |
| 1000+ | 1.48 EUR |
| 2000+ | 1.41 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFBE30SPBF Vishay
Description: MOSFET N-CH 800V 4.1A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V.
Weitere Produktangebote IRFBE30SPBF nach Preis ab 1.42 EUR bis 4.49 EUR
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IRFBE30SPBF | Hersteller : Vishay |
 Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK |
auf Bestellung 4700 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFBE30SPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; Idm: 16A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.6A Pulsed drain current: 16A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 490 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFBE30SPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; Idm: 16A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.6A Pulsed drain current: 16A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 78nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 490 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFBE30SPBF | Hersteller : Vishay |
Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK |
auf Bestellung 935 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFBE30SPBF | Hersteller : Vishay |
Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK |
auf Bestellung 935 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFBE30SPBF | Hersteller : Vishay Semiconductors |
MOSFETs N-Chan 800V 4.1 Amp |
auf Bestellung 1753 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFBE30SPBF | Hersteller : Vishay |
Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK |
auf Bestellung 700 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFBE30SPBF | Hersteller : VISHAY |
Description: VISHAY - IRFBE30SPBF - MOSFET, N D2-PAK 800V 4,1A |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFBE30SPBF | Hersteller : Vishay |
Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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IRFBE30SPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 800V 4.1A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
Produkt ist nicht verfügbar |