| Anzahl | Privatkunde |
|---|---|
| 71+ | 2.53 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
71 Stücke
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Technische Details IRFBE30SPBF Vishay
Description: MOSFET N-CH 800V 4.1A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V.
Weitere Produktangebote IRFBE30SPBF nach Preis ab 2.27 EUR bis 8.02 EUR
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IRFBE30SPBF | Vishay |
 Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK |
auf Bestellung 868 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFBE30SPBF | Vishay |
Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK |
auf Bestellung 1799 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFBE30SPBF | Vishay |
Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK |
auf Bestellung 1804 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFBE30SPBF | Vishay |
Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK |
auf Bestellung 379 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFBE30SPBF | Vishay Semiconductors |
MOSFETs N-Chan 800V 4.1 Amp |
auf Bestellung 975 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFBE30SPBF | Vishay Siliconix |
Description: MOSFET N-CH 800V 4.1A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
auf Bestellung 960 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFBE30SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; Idm: 16A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.6A Pulsed drain current: 16A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 78nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 380 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| IRFBE30SPBF | VISHAY |
Description: VISHAY - IRFBE30SPBF - MOSFET, N D2-PAK 800V 4,1A |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFBE30SPBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK
Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK
auf Bestellung 868 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 59+ | 3.02 EUR |
| 67+ | 2.58 EUR |
| 100+ | 2.38 EUR |
| 500+ | 2.27 EUR |
| IRFBE30SPBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK
Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK
auf Bestellung 1799 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 38+ | 4.74 EUR |
| 55+ | 3.25 EUR |
| 100+ | 2.83 EUR |
| 500+ | 2.55 EUR |
| 1000+ | 2.46 EUR |
| IRFBE30SPBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK
Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK
auf Bestellung 1804 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 38+ | 4.75 EUR |
| 54+ | 3.18 EUR |
| 100+ | 2.74 EUR |
| 500+ | 2.42 EUR |
| 1000+ | 2.28 EUR |
| IRFBE30SPBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK
Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK
auf Bestellung 379 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 31+ | 5.85 EUR |
| 50+ | 3.93 EUR |
| 100+ | 3.49 EUR |
| IRFBE30SPBF |
|
Hersteller: Vishay Semiconductors
MOSFETs N-Chan 800V 4.1 Amp
MOSFETs N-Chan 800V 4.1 Amp
auf Bestellung 975 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.5 EUR |
| 10+ | 4.13 EUR |
| 100+ | 3.75 EUR |
| 500+ | 3.08 EUR |
| 1000+ | 3.06 EUR |
| 5000+ | 2.98 EUR |
| IRFBE30SPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 4.1A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Description: MOSFET N-CH 800V 4.1A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 960 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.02 EUR |
| 50+ | 4.11 EUR |
| 100+ | 3.72 EUR |
| 500+ | 3.06 EUR |
| IRFBE30SPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; Idm: 16A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.6A
Pulsed drain current: 16A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; Idm: 16A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.6A
Pulsed drain current: 16A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 380 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFBE30SPBF |
|
Hersteller: VISHAY
Description: VISHAY - IRFBE30SPBF - MOSFET, N D2-PAK 800V 4,1A
Description: VISHAY - IRFBE30SPBF - MOSFET, N D2-PAK 800V 4,1A
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 41+ | 6.15 EUR |
| 46+ | 5.13 EUR |
| 100+ | 3.9 EUR |
| 500+ | 3.3 EUR |
| 1000+ | 2.78 EUR |