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Technische Details IRFBE30SPBF Vishay
Description: MOSFET N-CH 800V 4.1A D2PAK, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active.
Weitere Produktangebote IRFBE30SPBF nach Preis ab 2.3 EUR bis 8.02 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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IRFBE30SPBF | Vishay |
 Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK |
auf Bestellung 1848 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFBE30SPBF | Vishay |
Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK |
auf Bestellung 863 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFBE30SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; Idm: 16A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.6A Pulsed drain current: 16A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 78nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 380 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFBE30SPBF | Vishay |
Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK |
auf Bestellung 380 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFBE30SPBF | Vishay |
Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK |
auf Bestellung 1850 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFBE30SPBF | Vishay Semiconductors |
MOSFETs N-Chan 800V 4.1 Amp |
auf Bestellung 975 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFBE30SPBF | Vishay Siliconix |
Description: MOSFET N-CH 800V 4.1A D2PAK Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active |
auf Bestellung 960 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFBE30SPBF | VISHAY |
Description: VISHAY - IRFBE30SPBF - MOSFET, N D2-PAK 800V 4,1A |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFBE30SPBF |
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Hersteller: Vishay
Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK
Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK
auf Bestellung 1848 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 68+ | 2.62 EUR |
| IRFBE30SPBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK
Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK
auf Bestellung 863 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 49+ | 3.62 EUR |
| 61+ | 2.81 EUR |
| 100+ | 2.61 EUR |
| 500+ | 2.3 EUR |
| IRFBE30SPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; Idm: 16A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.6A
Pulsed drain current: 16A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; Idm: 16A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.6A
Pulsed drain current: 16A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 380 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 4.68 EUR |
| 28+ | 3.05 EUR |
| 50+ | 2.58 EUR |
| 100+ | 2.43 EUR |
| IRFBE30SPBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK
Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK
auf Bestellung 380 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 36+ | 5.02 EUR |
| 50+ | 4.22 EUR |
| 100+ | 3.87 EUR |
| IRFBE30SPBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK
Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK
auf Bestellung 1850 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 6.32 EUR |
| 48+ | 3.57 EUR |
| 100+ | 3.15 EUR |
| 500+ | 2.56 EUR |
| 1000+ | 2.3 EUR |
| IRFBE30SPBF |
|
Hersteller: Vishay Semiconductors
MOSFETs N-Chan 800V 4.1 Amp
MOSFETs N-Chan 800V 4.1 Amp
auf Bestellung 975 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.58 EUR |
| 10+ | 4.13 EUR |
| 100+ | 3.75 EUR |
| 500+ | 3.08 EUR |
| 1000+ | 3.01 EUR |
| IRFBE30SPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 4.1A D2PAK
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Description: MOSFET N-CH 800V 4.1A D2PAK
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 960 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.02 EUR |
| 50+ | 4.11 EUR |
| 100+ | 3.72 EUR |
| 500+ | 3.06 EUR |
| IRFBE30SPBF |
|
Hersteller: VISHAY
Description: VISHAY - IRFBE30SPBF - MOSFET, N D2-PAK 800V 4,1A
Description: VISHAY - IRFBE30SPBF - MOSFET, N D2-PAK 800V 4,1A
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 41+ | 6.15 EUR |
| 46+ | 5.13 EUR |
| 100+ | 3.9 EUR |
| 500+ | 3.3 EUR |
| 1000+ | 2.78 EUR |