IRFBF20LPBF Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 900V 1.7A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V
Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 999 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.78 EUR |
| 100+ | 1.77 EUR |
| 500+ | 1.76 EUR |
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Technische Details IRFBF20LPBF Vishay Siliconix
Description: MOSFET N-CH 900V 1.7A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc), Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V, Power Dissipation (Max): 3.1W (Ta), 54W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: I2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V.
Weitere Produktangebote IRFBF20LPBF nach Preis ab 1.57 EUR bis 2.78 EUR
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IRFBF20LPBF | Hersteller : Vishay Semiconductors |
MOSFETs N-Chan 900V 1.7 Amp |
auf Bestellung 337 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFBF20LPBF | Hersteller : Vishay |
Trans MOSFET N-CH 900V 1.7A 3-Pin(3+Tab) TO-262 |
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IRFBF20LPBF | Hersteller : Vishay |
Trans MOSFET N-CH 900V 1.7A 3-Pin(3+Tab) TO-262 |
Produkt ist nicht verfügbar |
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| IRFBF20LPBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W Mounting: THT Polarisation: unipolar Gate charge: 38nC Drain current: 1.1A Power dissipation: 54W Pulsed drain current: 6.8A Drain-source voltage: 900V On-state resistance: 8Ω Gate-source voltage: ±20V Case: I2PAK; TO262 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube |
Produkt ist nicht verfügbar |