auf Bestellung 457 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.11 EUR |
| 10+ | 1.94 EUR |
| 100+ | 1.92 EUR |
| 500+ | 1.76 EUR |
| 2000+ | 1.74 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFBF20LPBF Vishay Semiconductors
Description: MOSFET N-CH 900V 1.7A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc), Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V, Power Dissipation (Max): 3.1W (Ta), 54W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: I2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V.
Weitere Produktangebote IRFBF20LPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IRFBF20LPBF | Hersteller : Vishay |
 Trans MOSFET N-CH 900V 1.7A 3-Pin(3+Tab) TO-262 |
Produkt ist nicht verfügbar |
|
 |
IRFBF20LPBF | Hersteller : Vishay |
Trans MOSFET N-CH 900V 1.7A 3-Pin(3+Tab) TO-262 |
Produkt ist nicht verfügbar |
|
| IRFBF20LPBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.1A Pulsed drain current: 6.8A Power dissipation: 54W Case: I2PAK Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
 |
IRFBF20LPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 900V 1.7A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V Power Dissipation (Max): 3.1W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V |
Produkt ist nicht verfügbar |
|
| IRFBF20LPBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.1A Pulsed drain current: 6.8A Power dissipation: 54W Case: I2PAK Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |