IRFBF20PBF-BE3 Vishay / Siliconix
auf Bestellung 9603 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.84 EUR |
| 10+ | 2.78 EUR |
| 25+ | 2.27 EUR |
| 100+ | 1.99 EUR |
| 500+ | 1.83 EUR |
| 1000+ | 1.58 EUR |
| 2000+ | 1.50 EUR |
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Technische Details IRFBF20PBF-BE3 Vishay / Siliconix
Description: MOSFET N-CH 900V 1.7A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc), Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V, Power Dissipation (Max): 54W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V.
Weitere Produktangebote IRFBF20PBF-BE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IRFBF20PBF-BE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 900V 1.7A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IRFBF20PBF-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 900V 1.7A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V |
Produkt ist nicht verfügbar |