IRFBF20STRRPBF Vishay Semiconductors

Description: MOSFET N-CH 900V 1.7A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 54W (Tc), Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).