IRFBF20STRRPBF Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 900V 1.7A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Technische Details IRFBF20STRRPBF Vishay Siliconix
Description: MOSFET N-CH 900V 1.7A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 54W (Tc), Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote IRFBF20STRRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IRFBF20STRRPBF | Vishay Semiconductors |
MOSFETs N-Chan 900V 1.7 Amp |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IRFBF20STRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.1A Pulsed drain current: 6.8A Power dissipation: 54W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IRFBF20STRRPBF | Vishay |
Trans MOSFET N-CH 900V 1.7A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRFBF20STRRPBF |
|
Hersteller: Vishay Semiconductors
MOSFETs N-Chan 900V 1.7 Amp
MOSFETs N-Chan 900V 1.7 Amp
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFBF20STRRPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.1A
Pulsed drain current: 6.8A
Power dissipation: 54W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.1A
Pulsed drain current: 6.8A
Power dissipation: 54W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFBF20STRRPBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 900V 1.7A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 900V 1.7A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH