IRFBF30STRLPBF Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 900V 3.6A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
| Anzahl | Preis |
|---|---|
| 800+ | 2.54 EUR |
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Technische Details IRFBF30STRLPBF Vishay Siliconix
Description: MOSFET N-CH 900V 3.6A TO263, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB.
Weitere Produktangebote IRFBF30STRLPBF nach Preis ab 3.23 EUR bis 6.9 EUR
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IRFBF30STRLPBF | Vishay Siliconix |
Description: MOSFET N-CH 900V 3.6A TO263 Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): ±20V |
auf Bestellung 1389 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IRFBF30STRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 900V 3.6A TO263
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Description: MOSFET N-CH 900V 3.6A TO263
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
auf Bestellung 1389 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.9 EUR |
| 10+ | 4.56 EUR |
| 100+ | 3.23 EUR |