IRFBG20PBF-BE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 1000V 1.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 840mA, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 1462 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.92 EUR |
| 50+ | 1.82 EUR |
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Technische Details IRFBG20PBF-BE3 Vishay Siliconix
Description: MOSFET N-CH 1000V 1.4A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc), Rds On (Max) @ Id, Vgs: 11Ohm @ 840mA, 10V, Power Dissipation (Max): 54W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V.
Weitere Produktangebote IRFBG20PBF-BE3 nach Preis ab 1.10 EUR bis 3.04 EUR
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IRFBG20PBF-BE3 | Hersteller : Vishay / Siliconix |
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auf Bestellung 10638 Stücke: Lieferzeit 10-14 Tag (e) |
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Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1.4A; Idm: 5.6A; 54W; TO220AB On-state resistance: 11Ω Drain current: 1.4A Drain-source voltage: 1kV Power dissipation: 54W Case: TO220AB Polarisation: unipolar Kind of package: tube Mounting: THT Gate charge: 38nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 5.6A Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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| IRFBG20PBF-BE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1.4A; Idm: 5.6A; 54W; TO220AB On-state resistance: 11Ω Drain current: 1.4A Drain-source voltage: 1kV Power dissipation: 54W Case: TO220AB Polarisation: unipolar Kind of package: tube Mounting: THT Gate charge: 38nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 5.6A Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |