auf Bestellung 5171 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.94 EUR |
| 10+ | 1.45 EUR |
| 100+ | 1.36 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.15 EUR |
| 2000+ | 1 EUR |
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Technische Details IRFBG20PBF-BE3 Vishay / Siliconix
Description: MOSFET N-CH 1000V 1.4A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc), Rds On (Max) @ Id, Vgs: 11Ohm @ 840mA, 10V, Power Dissipation (Max): 54W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V.
Weitere Produktangebote IRFBG20PBF-BE3 nach Preis ab 1.89 EUR bis 5.47 EUR
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IRFBG20PBF-BE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 1000V 1.4A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Rds On (Max) @ Id, Vgs: 11Ohm @ 840mA, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
auf Bestellung 1452 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFBG20PBF-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 1KV 1.4A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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| IRFBG20PBF-BE3 | Hersteller : Vishay |
Surface Mount Fast Switching, Low Resistance Power MOSFET |
Produkt ist nicht verfügbar |
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| IRFBG20PBF-BE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1.4A; Idm: 5.6A; 54W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.4A Pulsed drain current: 5.6A Power dissipation: 54W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 11Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |