auf Bestellung 2355 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 69+ | 2.3 EUR |
| 77+ | 1.98 EUR |
| 100+ | 1.64 EUR |
| 250+ | 1.55 EUR |
| 500+ | 1.33 EUR |
| 1000+ | 1.09 EUR |
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Technische Details IRFD113PBF Vishay
Description: MOSFET N-CH 60V 800MA 4DIP, Packaging: Tube, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 800mA, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 4-HVMDIP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V.
Weitere Produktangebote IRFD113PBF nach Preis ab 1.09 EUR bis 5.02 EUR
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IRFD113PBF | Hersteller : Vishay |
 Trans MOSFET N-CH 60V 0.8A 4-Pin HVMDIP |
auf Bestellung 2355 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFD113PBF | Hersteller : Vishay / Siliconix |
MOSFET 60V 800mOhm@10V 0.8A N-Ch |
auf Bestellung 788 Stücke: Lieferzeit 14-28 Tag (e) |
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IRFD113PBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 800MA 4DIP Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 800mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-HVMDIP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V |
auf Bestellung 2315 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFD113PBF | Hersteller : Vishay |
Trans MOSFET N-CH 60V 0.8A 4-Pin HVMDIP |
auf Bestellung 193 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFD113PBF | Hersteller : Vishay |
Trans MOSFET N-CH 60V 0.8A 4-Pin HVMDIP |
auf Bestellung 193 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFD113PBF | Hersteller : Vishay |
Trans MOSFET N-CH 60V 0.8A 4-Pin HVMDIP |
Produkt ist nicht verfügbar |
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| IRFD113PBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 800mA; Idm: 6.4A; 1W; HVMDIP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.8A Pulsed drain current: 6.4A Power dissipation: 1W Case: HVMDIP Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Gate charge: 7nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| IRFD113PBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 800mA; Idm: 6.4A; 1W; HVMDIP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.8A Pulsed drain current: 6.4A Power dissipation: 1W Case: HVMDIP Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Gate charge: 7nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |