auf Bestellung 664 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.78 EUR |
| 10+ | 2.22 EUR |
| 100+ | 1.70 EUR |
| 500+ | 1.49 EUR |
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Technische Details IRFD113PBF Vishay / Siliconix
Description: MOSFET N-CH 60V 800MA 4DIP, Packaging: Tube, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 800mA, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 4-HVMDIP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V.
Weitere Produktangebote IRFD113PBF nach Preis ab 1.47 EUR bis 4.75 EUR
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IRFD113PBF | Hersteller : Vishay |
 Trans MOSFET N-CH 60V 0.8A 4-Pin HVMDIP |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFD113PBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 800MA 4DIP Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 800mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-HVMDIP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V |
auf Bestellung 2031 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFD113PBF | Hersteller : Vishay |
Trans MOSFET N-CH 60V 0.8A 4-Pin HVMDIP |
Produkt ist nicht verfügbar |
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| IRFD113PBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.8A; Idm: 6.4A; 1W; HVMDIP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.8A Pulsed drain current: 6.4A Power dissipation: 1W Case: HVMDIP Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Gate charge: 7nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| IRFD113PBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.8A; Idm: 6.4A; 1W; HVMDIP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.8A Pulsed drain current: 6.4A Power dissipation: 1W Case: HVMDIP Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Gate charge: 7nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |