| Anzahl | Preis |
|---|---|
| 2+ | 2.78 EUR |
| 10+ | 2.22 EUR |
| 100+ | 1.7 EUR |
| 500+ | 1.49 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFD113PBF Vishay / Siliconix
Description: MOSFET N-CH 60V 800MA 4DIP, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: 4-DIP (0.300", 7.62mm), Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 4-HVMDIP, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1W (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 800mA, 10V, Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), FET Type: N-Channel.
Weitere Produktangebote IRFD113PBF nach Preis ab 1.47 EUR bis 4.75 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IRFD113PBF | Vishay Siliconix |
 Description: MOSFET N-CH 60V 800MA 4DIPTechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 4-HVMDIP Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 800mA, 10V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) FET Type: N-Channel |
auf Bestellung 2031 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IRFD113PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 800MA 4DIP
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 800mA, 10V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 60V 800MA 4DIP
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 800mA, 10V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
FET Type: N-Channel
auf Bestellung 2031 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.75 EUR |
| 10+ | 3.07 EUR |
| 100+ | 2.12 EUR |
| 500+ | 1.71 EUR |
| 1000+ | 1.58 EUR |
| 2000+ | 1.47 EUR |