IRFD210 Siliconix

HRISD017-4-398.pdf?t.download=true&u=5oefqw

Hersteller: Siliconix
N-MOSFET 0.6A 200V 1W 1.5Ω IRFD210 TIRFD210
Anzahl je Verpackung: 10 Stücke

auf Bestellung 100 Stücke:

Lieferzeit 7-14 Tag (e)

Anzahl	Preis ohne MwSt
40+	0.85 EUR

Mindestbestellmenge: 40

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Technische Details IRFD210 Siliconix

Description: 0.6A 200V 1.500 OHM N-CHANNEL, Packaging: Bulk, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 600mA (Ta), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 360mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 4-DIP, Hexdip, HVMDIP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V.

Weitere Produktangebote IRFD210 nach Preis ab 1.5 EUR bis 1.5 EUR

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IRFD210

Hersteller : Harris Corporation

Description: 0.6A 200V 1.500 OHM N-CHANNEL
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 360mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V

auf Bestellung 1014 Stücke:

Lieferzeit 10-14 Tag (e)