IRFD210 Siliconix
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 40+ | 0.85 EUR |
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Technische Details IRFD210 Siliconix
Description: 0.6A 200V 1.500 OHM N-CHANNEL, Packaging: Bulk, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 600mA (Ta), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 360mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 4-DIP, Hexdip, HVMDIP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V.
Weitere Produktangebote IRFD210 nach Preis ab 1.52 EUR bis 1.98 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis | ||||||||
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| IRFD210 | Hersteller : Harris Corporation |
 Description: 0.6A 200V 1.500 OHM N-CHANNELPackaging: Bulk Package / Case: 4-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 360mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-DIP, Hexdip, HVMDIP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V |
auf Bestellung 1014 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFD210 | Hersteller : HARRIS |
IRFD210 |
auf Bestellung 1014 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFD210 |
IRFD210 Транзисторы HEXFET |
auf Bestellung 10 Stücke: Lieferzeit 7-21 Tag (e) |
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IRFD210 | Hersteller : Vishay |
Trans MOSFET N-CH 200V 0.6A 4-Pin HVMDIP |
Produkt ist nicht verfügbar |
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IRFD210 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 600MA 4DIP Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 360mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-HVMDIP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFD210 | Hersteller : Vishay / Siliconix |
MOSFETs RECOMMENDED ALT IRFD |
Produkt ist nicht verfügbar |
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IRFD210 | Hersteller : onsemi / Fairchild |
MOSFETs |
Produkt ist nicht verfügbar |