auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 113+ | 1.3 EUR |
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Technische Details IRFD224PBF Vishay
Description: MOSFET N-CH 250V 630MA 4DIP, Packaging: Tube, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 630mA (Ta), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 380mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 4-HVMDIP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V.
Weitere Produktangebote IRFD224PBF nach Preis ab 0.68 EUR bis 2.34 EUR
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IRFD224PBF | Hersteller : Vishay |
 Trans MOSFET N-CH 250V 0.63A 4-Pin HVMDIP |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFD224PBF | Hersteller : Vishay Semiconductors |
MOSFET N-Chan 250V 0.63 Amp |
auf Bestellung 1735 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFD224PBF | Hersteller : Vishay |
Trans MOSFET N-CH 250V 0.63A 4-Pin HVMDIP |
Produkt ist nicht verfügbar |
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| IRFD224PBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 0.63A; Idm: 5A; 1W; HVMDIP Mounting: THT Drain-source voltage: 250V Drain current: 0.63A On-state resistance: 1.1Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: tube Gate charge: 14nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 5A Case: HVMDIP Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRFD224PBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 250V 630MA 4DIP Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 380mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-HVMDIP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V |
Produkt ist nicht verfügbar |
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| IRFD224PBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 0.63A; Idm: 5A; 1W; HVMDIP Mounting: THT Drain-source voltage: 250V Drain current: 0.63A On-state resistance: 1.1Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: tube Gate charge: 14nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 5A Case: HVMDIP |
Produkt ist nicht verfügbar |