auf Bestellung 3835 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
57+ | 2.74 EUR |
69+ | 2.19 EUR |
100+ | 1.66 EUR |
250+ | 1.53 EUR |
500+ | 1.29 EUR |
1000+ | 1 EUR |
2500+ | 0.94 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFD320PBF Vishay
Description: MOSFET N-CH 400V 490MA 4DIP, Packaging: Tube, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 490mA (Ta), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 210mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 4-HVMDIP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V.
Weitere Produktangebote IRFD320PBF nach Preis ab 0.65 EUR bis 4.32 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IRFD320PBF | Hersteller : Vishay | Trans MOSFET N-CH 400V 0.49A 4-Pin HVMDIP |
auf Bestellung 3835 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFD320PBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 0.31A; 1W; DIP4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 0.31A Power dissipation: 1W Case: DIP4 Gate-source voltage: ±20V On-state resistance: 1.8Ω Mounting: THT Gate charge: 20nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 23 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFD320PBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 0.31A; 1W; DIP4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 0.31A Power dissipation: 1W Case: DIP4 Gate-source voltage: ±20V On-state resistance: 1.8Ω Mounting: THT Gate charge: 20nC Kind of channel: enhanced |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFD320PBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 400V 490MA 4DIP Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 490mA (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 210mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-HVMDIP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V |
auf Bestellung 303 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFD320PBF | Hersteller : Vishay Semiconductors | MOSFET 400V N-CH HEXFET HEXDI |
auf Bestellung 4176 Stücke: Lieferzeit 14-28 Tag (e) |
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IRFD320PBF | Hersteller : Vishay | Trans MOSFET N-CH 400V 0.49A 4-Pin HVMDIP |
Produkt ist nicht verfügbar |
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IRFD320PBF | Hersteller : Vishay | Trans MOSFET N-CH 400V 0.49A 4-Pin HVMDIP |
Produkt ist nicht verfügbar |