auf Bestellung 1111 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 206+ | 2.67 EUR |
| 500+ | 2.45 EUR |
| 1000+ | 2.22 EUR |
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Technische Details IRFD322 HARRIS
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 400mA (Tc), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 4-DIP, Hexdip, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V.
Weitere Produktangebote IRFD322 nach Preis ab 2.78 EUR bis 2.78 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
| IRFD322 | Hersteller : Harris Corporation |
 Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: 4-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-DIP, Hexdip Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V |
auf Bestellung 1111 Stücke: Lieferzeit 10-14 Tag (e) |
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