| Anzahl | Preis |
|---|---|
| 1+ | 3.64 EUR |
| 10+ | 2.18 EUR |
| 100+ | 1.64 EUR |
| 250+ | 1.61 EUR |
| 500+ | 1.37 EUR |
| 1000+ | 1.21 EUR |
| 2500+ | 1.17 EUR |
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Technische Details IRFD9020PBF Vishay / Siliconix
Description: MOSFET P-CH 60V 1.6A 4DIP, Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 4-HVMDIP, Vgs(th) (Max) @ Id: 4V @ 1µA, Power Dissipation (Max): 1.3W (Ta), Rds On (Max) @ Id, Vgs: 280mOhm @ 960mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: 4-DIP (0.300", 7.62mm), Packaging: Tube.
Weitere Produktangebote IRFD9020PBF nach Preis ab 2.38 EUR bis 3.7 EUR
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IRFD9020PBF | Vishay Siliconix |
 Description: MOSFET P-CH 60V 1.6A 4DIPInput Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 4-HVMDIP Vgs(th) (Max) @ Id: 4V @ 1µA Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 280mOhm @ 960mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Packaging: Tube |
auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFD9020PBF | Vishay |
Trans MOSFET P-CH 60V 1.6A 4-Pin HVMDIP |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRFD9020PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 1.6A 4DIP
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 1µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 960mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Description: MOSFET P-CH 60V 1.6A 4DIP
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 1µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 960mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.7 EUR |
| 10+ | 2.38 EUR |
| IRFD9020PBF |
|
Hersteller: Vishay
Trans MOSFET P-CH 60V 1.6A 4-Pin HVMDIP
Trans MOSFET P-CH 60V 1.6A 4-Pin HVMDIP
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)