auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 765+ | 0.72 EUR |
| 1000+ | 0.64 EUR |
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Technische Details IRFD9110 HARRIS
Description: 0.7A 100V 1.200 OHM P-CHANNEL, Packaging: Bulk, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 420mA, 10V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 4-DIP, Hexdip, HVMDIP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V.
Weitere Produktangebote IRFD9110 nach Preis ab 0.64 EUR bis 0.85 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFD9110 | Hersteller : HARRIS |
IRFD9110 |
auf Bestellung 2652 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFD9110 | Hersteller : Harris Corporation |
Description: 0.7A 100V 1.200 OHM P-CHANNEL Packaging: Bulk Package / Case: 4-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 420mA, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-DIP, Hexdip, HVMDIP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V |
auf Bestellung 10652 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFD9110 | Hersteller : Siliconix |
P-MOSFET 0.7A 100V 1.3W 1.2Ω IRFD9110 TIRFD9110 Anzahl je Verpackung: 50 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFD9110 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 0.7A 4-Pin HVMDIP |
Produkt ist nicht verfügbar |
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IRFD9110 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 100V 700MA 4DIP Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 420mA, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-HVMDIP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFD9110 | Hersteller : Vishay / Siliconix |
MOSFETs RECOMMENDED ALT IRFD |
Produkt ist nicht verfügbar |
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IRFD9110 | Hersteller : onsemi / Fairchild |
MOSFETs |
Produkt ist nicht verfügbar |