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IRFD9210PBF

IRFD9210PBF VISHAY


irfd9210.pdf Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -0.25A; 1W; DIP4
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -0.25A
Power dissipation: 1W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance:
Mounting: THT
Gate charge: 8.9nC
Kind of channel: enhancement
auf Bestellung 1975 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.37 EUR
63+1.15 EUR
72+1 EUR
94+0.77 EUR
139+0.51 EUR
200+0.45 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IRFD9210PBF VISHAY

Description: MOSFET P-CH 200V 400MA 4DIP, Packaging: Bulk, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 240mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 4-HVMDIP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V.

Weitere Produktangebote IRFD9210PBF nach Preis ab 0.74 EUR bis 3.66 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IRFD9210PBF IRFD9210PBF Hersteller : Vishay sihfd921.pdf Trans MOSFET P-CH 200V 0.4A 4-Pin HVMDIP
auf Bestellung 1975 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
101+1.42 EUR
156+0.89 EUR
200+0.74 EUR
Mindestbestellmenge: 101
Im Einkaufswagen  Stück im Wert von  UAH
IRFD9210PBF IRFD9210PBF Hersteller : Vishay Siliconix tf-irfd9210pbf.pdf Description: MOSFET P-CH 200V 400MA 4DIP
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 240mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 891 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.66 EUR
10+2.36 EUR
100+1.61 EUR
500+1.29 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRFD9210PBF IRFD9210PBF Hersteller : Vishay / Siliconix tf-irfd9210pbf.pdf MOSFETs HVMDIP 200V .4A P-CH MOSFET
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