IRFD9210PBF VISHAY
Hersteller: VISHAYCategory: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -0.25A; 1W; DIP4
Case: DIP4
Mounting: THT
Drain-source voltage: -200V
Drain current: -250mA
On-state resistance: 3Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 8.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 2080 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 64+ | 1.13 EUR |
| 100+ | 0.72 EUR |
| 112+ | 0.64 EUR |
| 146+ | 0.49 EUR |
| 154+ | 0.47 EUR |
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Technische Details IRFD9210PBF VISHAY
Description: MOSFET P-CH 200V 400MA 4DIP, Packaging: Bulk, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 240mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 4-HVMDIP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V.
Weitere Produktangebote IRFD9210PBF nach Preis ab 0.47 EUR bis 4.08 EUR
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IRFD9210PBF | Hersteller : VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -0.25A; 1W; DIP4 Case: DIP4 Mounting: THT Drain-source voltage: -200V Drain current: -250mA On-state resistance: 3Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Gate charge: 8.9nC Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2080 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFD9210PBF | Hersteller : Vishay |
Trans MOSFET P-CH 200V 0.4A 4-Pin HVMDIP |
auf Bestellung 396 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFD9210PBF | Hersteller : Vishay |
Trans MOSFET P-CH 200V 0.4A 4-Pin HVMDIP |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFD9210PBF | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 200V 400MA 4DIP Packaging: Bulk Package / Case: 4-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 240mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-HVMDIP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
auf Bestellung 3184 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFD9210PBF | Hersteller : Vishay |
Trans MOSFET P-CH 200V 0.4A 4-Pin HVMDIP |
auf Bestellung 258 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFD9210PBF | Hersteller : Vishay / Siliconix |
MOSFETs HVMDIP 200V .4A P-CH MOSFET |
Produkt ist nicht verfügbar |