auf Bestellung 2469 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.57 EUR |
| 10+ | 2.85 EUR |
| 100+ | 2.25 EUR |
| 500+ | 1.83 EUR |
| 1000+ | 1.59 EUR |
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Technische Details IRFDC20PBF Vishay / Siliconix
Description: MOSFET N-CH 600V 320MA 4DIP, Packaging: Tube, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), Rds On (Max) @ Id, Vgs: 4.4Ohm @ 190mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 4-HVMDIP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V.
Weitere Produktangebote IRFDC20PBF nach Preis ab 1.38 EUR bis 4.51 EUR
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IRFDC20PBF | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 600V 320MA 4DIPPackaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 4.4Ohm @ 190mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-HVMDIP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
auf Bestellung 5495 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFDC20PBF | Hersteller : Vishay |
Trans MOSFET N-CH 600V 0.32A 4-Pin HVMDIP |
Produkt ist nicht verfügbar |
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IRFDC20PBF | Hersteller : Vishay |
IRFDC20PBF Vishay MOSFETs Transistor N-CH 600V 0.32A 4-Pin HVMDIP - Arrow.com |
Produkt ist nicht verfügbar |
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IRFDC20PBF | Hersteller : VISHAY |
Description: VISHAY - IRFDC20PBF - N CHANNEL MOSFET, 600V, 320mA, HD-1 Transistormontage: Through Hole Drain-Source-Spannung Vds: 600 Dauer-Drainstrom Id: 320 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - Unlimited Verlustleistung Pd: 1.3 Bauform - Transistor: HVMDIP Anzahl der Pins: 4 Produktpalette: - Wandlerpolarität: N Channel Betriebswiderstand, Rds(on): 4.4 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 4 SVHC: No SVHC (19-Jan-2021) |
Produkt ist nicht verfügbar |
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| IRFDC20PBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.32A; Idm: 2.6A; 1W; HVMDIP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.32A Pulsed drain current: 2.6A Power dissipation: 1W Case: HVMDIP Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |