| Anzahl | Preis |
|---|---|
| 1+ | 3.57 EUR |
| 10+ | 2.85 EUR |
| 100+ | 2.25 EUR |
| 500+ | 1.83 EUR |
| 1000+ | 1.59 EUR |
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Technische Details IRFDC20PBF Vishay / Siliconix
Description: MOSFET N-CH 600V 320MA 4DIP, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 4-HVMDIP, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 4.4Ohm @ 190mA, 10V, Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: 4-DIP (0.300", 7.62mm), Packaging: Tube.
Weitere Produktangebote IRFDC20PBF nach Preis ab 1.39 EUR bis 4.54 EUR
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IRFDC20PBF | Vishay Siliconix |
 Description: MOSFET N-CH 600V 320MA 4DIPInput Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 4-HVMDIP Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 4.4Ohm @ 190mA, 10V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Packaging: Tube |
auf Bestellung 5395 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IRFDC20PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 320MA 4DIP
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 190mA, 10V
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Description: MOSFET N-CH 600V 320MA 4DIP
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 190mA, 10V
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
auf Bestellung 5395 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.54 EUR |
| 10+ | 2.95 EUR |
| 100+ | 2.04 EUR |
| 500+ | 1.65 EUR |
| 1000+ | 1.52 EUR |
| 2000+ | 1.42 EUR |
| 5000+ | 1.39 EUR |