Weitere Produktangebote IRFH3707TRPBF nach Preis ab 0.24 EUR bis 1.16 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IRFH3707TRPBF | Infineon Technologies |
 MOSFETs 30V 1 N-CH HEXFET 12.4mOhms 5.4nC |
auf Bestellung 2343 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
IRFH3707TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 12A/29A 8PQFN Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PQFN (3x3) Vgs(th) (Max) @ Id: 2.35V @ 25µA Power Dissipation (Max): 2.8W (Ta) Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 29A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 313 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IRFH3707TRPBF |
|
Hersteller: Infineon Technologies
MOSFETs 30V 1 N-CH HEXFET 12.4mOhms 5.4nC
MOSFETs 30V 1 N-CH HEXFET 12.4mOhms 5.4nC
auf Bestellung 2343 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 0.97 EUR |
| 10+ | 0.72 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.29 EUR |
| 2500+ | 0.28 EUR |
| 4000+ | 0.24 EUR |
| IRFH3707TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 12A/29A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (3x3)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.8W (Ta)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 12A/29A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (3x3)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.8W (Ta)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 313 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 1.16 EUR |
| 25+ | 0.72 EUR |
| 100+ | 0.46 EUR |