IRFH4226TRPBF Infineon Technologies
auf Bestellung 2320 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 224+ | 2.42 EUR |
| 500+ | 2.21 EUR |
| 1000+ | 2.01 EUR |
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Technische Details IRFH4226TRPBF Infineon Technologies
Description: MOSFET N-CH 25V 30A/70A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 70A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V, Power Dissipation (Max): 3.4W (Ta), 46W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 50µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 13 V.
Weitere Produktangebote IRFH4226TRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRFH4226TRPBF | Hersteller : Infineon / IR |
 MOSFET MOSFET, 25V,70A 2.4 mo, 16nC,PQFN5x6 |
auf Bestellung 2725 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH4226TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 25V 30A/70A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V Power Dissipation (Max): 3.4W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 50µA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 13 V |
Produkt ist nicht verfügbar |
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IRFH4226TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 25V 30A/70A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V Power Dissipation (Max): 3.4W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 50µA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 13 V |
Produkt ist nicht verfügbar |