IRFH4251DTRPBF Infineon Technologies
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 1.69 EUR |
| 8000+ | 1.49 EUR |
| 16000+ | 1.33 EUR |
Produktrezensionen
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Technische Details IRFH4251DTRPBF Infineon Technologies
Description: MOSFET 2N-CH 25V 64A/188A PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Schottky, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 31W, 63W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 64A, 188A, Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V, Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 35µA, Supplier Device Package: PG-TISON-8, Part Status: Last Time Buy.
Weitere Produktangebote IRFH4251DTRPBF nach Preis ab 1.49 EUR bis 1.69 EUR
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IRFH4251DTRPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 25V 64A/188A 8-Pin PQFN EP T/R |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFH4251DTRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 31W; PQFN5X6; FastIRFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 45A Power dissipation: 31W Case: PQFN5X6 Mounting: SMD Kind of channel: enhancement Kind of package: reel Trade name: FastIRFET Anzahl je Verpackung: 4000 Stücke |
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IRFH4251DTRPBF | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 25V 64A/188A PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 31W, 63W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 64A, 188A Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 35µA Supplier Device Package: PG-TISON-8 Part Status: Last Time Buy |
Produkt ist nicht verfügbar |
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IRFH4251DTRPBF | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 25V 64A/188A PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 31W, 63W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 64A, 188A Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 35µA Supplier Device Package: PG-TISON-8 Part Status: Last Time Buy |
Produkt ist nicht verfügbar |
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IRFH4251DTRPBF | Hersteller : Infineon / IR |
MOSFET 25V Dual N-Ch 1.10mOhm 44nC 45A |
Produkt ist nicht verfügbar |
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IRFH4251DTRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 31W; PQFN5X6; FastIRFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 45A Power dissipation: 31W Case: PQFN5X6 Mounting: SMD Kind of channel: enhancement Kind of package: reel Trade name: FastIRFET |
Produkt ist nicht verfügbar |