IRFH4251DTRPBF Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 25V 64A/188A PQFN
Part Status: Last Time Buy
Supplier Device Package: PG-TISON-8
Vgs(th) (Max) @ Id: 2.1V @ 35µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Current - Continuous Drain (Id) @ 25°C: 64A, 188A
Drain to Source Voltage (Vdss): 25V
Power - Max: 31W, 63W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual), Schottky
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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Technische Details IRFH4251DTRPBF Infineon Technologies
Description: MOSFET 2N-CH 25V 64A/188A PQFN, Part Status: Last Time Buy, Supplier Device Package: PG-TISON-8, Vgs(th) (Max) @ Id: 2.1V @ 35µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V, Current - Continuous Drain (Id) @ 25°C: 64A, 188A, Drain to Source Voltage (Vdss): 25V, Power - Max: 31W, 63W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Schottky, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote IRFH4251DTRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IRFH4251DTRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 25V 64A/188A PQFNPart Status: Last Time Buy Supplier Device Package: PG-TISON-8 Vgs(th) (Max) @ Id: 2.1V @ 35µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V Current - Continuous Drain (Id) @ 25°C: 64A, 188A Drain to Source Voltage (Vdss): 25V Power - Max: 31W, 63W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual), Schottky Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
IRFH4251DTRPBF | Infineon / IR |
MOSFET 25V Dual N-Ch 1.10mOhm 44nC 45A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRFH4251DTRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 25V 64A/188A PQFN
Part Status: Last Time Buy
Supplier Device Package: PG-TISON-8
Vgs(th) (Max) @ Id: 2.1V @ 35µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Current - Continuous Drain (Id) @ 25°C: 64A, 188A
Drain to Source Voltage (Vdss): 25V
Power - Max: 31W, 63W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual), Schottky
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 25V 64A/188A PQFN
Part Status: Last Time Buy
Supplier Device Package: PG-TISON-8
Vgs(th) (Max) @ Id: 2.1V @ 35µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Current - Continuous Drain (Id) @ 25°C: 64A, 188A
Drain to Source Voltage (Vdss): 25V
Power - Max: 31W, 63W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual), Schottky
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH4251DTRPBF |
![]() |
Hersteller: Infineon / IR
MOSFET 25V Dual N-Ch 1.10mOhm 44nC 45A
MOSFET 25V Dual N-Ch 1.10mOhm 44nC 45A
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH

