Technische Details IRFH4253DTRPBF Infineon Technologies
Description: MOSFET 2N-CH 25V 64A/145A PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 31W, 50W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 64A, 145A, Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V, Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 35µA, Supplier Device Package: PQFN (5x6), Part Status: Not For New Designs.
Weitere Produktangebote IRFH4253DTRPBF nach Preis ab 1.48 EUR bis 5.32 EUR
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IRFH4253DTRPBF | Infineon Technologies |
 Trans MOSFET N-CH 25V 64A/145A 8-Pin PQFN EP T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFH4253DTRPBF | Infineon Technologies |
MOSFETs 25V Dual N-Ch 1.45mOhm 31nC 45A |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH4253DTRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 25V 64A/145A PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 31W, 50W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 64A, 145A Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 35µA Supplier Device Package: PQFN (5x6) Part Status: Not For New Designs |
auf Bestellung 3990 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFH4253DTRPBF |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 25V 64A/145A 8-Pin PQFN EP T/R
Trans MOSFET N-CH 25V 64A/145A 8-Pin PQFN EP T/R
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 1.48 EUR |
| IRFH4253DTRPBF |
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Hersteller: Infineon Technologies
MOSFETs 25V Dual N-Ch 1.45mOhm 31nC 45A
MOSFETs 25V Dual N-Ch 1.45mOhm 31nC 45A
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.07 EUR |
| 10+ | 3.29 EUR |
| 100+ | 2.31 EUR |
| 500+ | 1.92 EUR |
| 1000+ | 1.83 EUR |
| 2000+ | 1.8 EUR |
| 4000+ | 1.74 EUR |
| IRFH4253DTRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 25V 64A/145A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 31W, 50W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 64A, 145A
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: PQFN (5x6)
Part Status: Not For New Designs
Description: MOSFET 2N-CH 25V 64A/145A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 31W, 50W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 64A, 145A
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: PQFN (5x6)
Part Status: Not For New Designs
auf Bestellung 3990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.32 EUR |
| 10+ | 3.46 EUR |
| 100+ | 2.4 EUR |
| 500+ | 1.95 EUR |
| 1000+ | 1.85 EUR |