IRFH4255DTRPBF Infineon Technologies

Description: MOSFET 2N-CH 25V 64A/105A PQFN, Supplier Device Package: PQFN (5x6), Vgs(th) (Max) @ Id: 2.1V @ 35µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V, Current - Continuous Drain (Id) @ 25°C: 64A, 105A, Drain to Source Voltage (Vdss): 25V, Power - Max: 31W, 38W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).