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IRFH4257DTRPBF

IRFH4257DTRPBF Infineon / IR


irfh4257dpbf-1227053.pdf Hersteller: Infineon / IR
MOSFET 25V FastIRFET 4x5 POWER BLOCK PKG
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Lieferzeit 14-28 Tag (e)
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Technische Details IRFH4257DTRPBF Infineon / IR

Description: MOSFET 2N-CH 25V 25A PQFN, Packaging: Bulk, Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 25W, 28W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 25A, Input Capacitance (Ciss) (Max) @ Vds: 1321pF @ 13V, Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 35µA, Supplier Device Package: Dual PQFN (5x4), Part Status: Active.

Weitere Produktangebote IRFH4257DTRPBF nach Preis ab 1.59 EUR bis 1.59 EUR

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IRFH4257DTRPBF Hersteller : International Rectifier irfh4257dpbf.pdf?fileId=5546d462533600a40153561a95aa1e92 Description: MOSFET 2N-CH 25V 25A PQFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 25W, 28W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 1321pF @ 13V
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: Dual PQFN (5x4)
Part Status: Active
auf Bestellung 1834 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
306+1.59 EUR
Mindestbestellmenge: 306
IRFH4257DTRPBF IRFH4257DTRPBF Hersteller : Infineon Technologies irfh4257dpbf.pdf Trans MOSFET N-CH 25V 68A/111A 8-Pin QFN EP T/R
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