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Technische Details IRFH4257DTRPBF Infineon / IR
Description: MOSFET 2N-CH 25V 25A PQFN, Packaging: Bulk, Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 25W, 28W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 25A, Input Capacitance (Ciss) (Max) @ Vds: 1321pF @ 13V, Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 35µA, Supplier Device Package: Dual PQFN (5x4).
Weitere Produktangebote IRFH4257DTRPBF nach Preis ab 2.02 EUR bis 2.58 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFH4257DTRPBF | International Rectifier HiRel Products |
 Trans MOSFET N-CH 25V 68A/111A 8-Pin QFN EP T/R |
auf Bestellung 1834 Stücke: Lieferzeit 14-21 Tag (e) |
|
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| IRFH4257DTRPBF | International Rectifier |
Description: MOSFET 2N-CH 25V 25A PQFN Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 25W, 28W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 25A Input Capacitance (Ciss) (Max) @ Vds: 1321pF @ 13V Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 35µA Supplier Device Package: Dual PQFN (5x4) |
auf Bestellung 1834 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IRFH4257DTRPBF |
|
Hersteller: International Rectifier HiRel Products
Trans MOSFET N-CH 25V 68A/111A 8-Pin QFN EP T/R
Trans MOSFET N-CH 25V 68A/111A 8-Pin QFN EP T/R
auf Bestellung 1834 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 261+ | 2.53 EUR |
| 500+ | 2.25 EUR |
| 1000+ | 2.02 EUR |
| IRFH4257DTRPBF |
|
Hersteller: International Rectifier
Description: MOSFET 2N-CH 25V 25A PQFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 25W, 28W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 1321pF @ 13V
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: Dual PQFN (5x4)
Description: MOSFET 2N-CH 25V 25A PQFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 25W, 28W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 1321pF @ 13V
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: Dual PQFN (5x4)
auf Bestellung 1834 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 209+ | 2.58 EUR |