Technische Details IRFH4257DTRPBF Infineon / IR
Description: MOSFET 2N-CH 25V 25A PQFN, Packaging: Bulk, Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 25W, 28W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 25A, Input Capacitance (Ciss) (Max) @ Vds: 1321pF @ 13V, Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 35µA, Supplier Device Package: Dual PQFN (5x4), Part Status: Active.
Weitere Produktangebote IRFH4257DTRPBF nach Preis ab 1.95 EUR bis 1.95 EUR
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IRFH4257DTRPBF | Hersteller : International Rectifier |
![]() Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 25W, 28W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 25A Input Capacitance (Ciss) (Max) @ Vds: 1321pF @ 13V Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 35µA Supplier Device Package: Dual PQFN (5x4) Part Status: Active |
auf Bestellung 1834 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH4257DTRPBF | Hersteller : Infineon Technologies |
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