IRFH5010TR2PBF Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 100V 13A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
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Technische Details IRFH5010TR2PBF Infineon Technologies
Description: MOSFET N-CH 100V 13A 5X6 PQFN, Packaging: Cut Tape (CT), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V, Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Obsolete, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IRFH5010TR2PBF | Hersteller : Infineon / IR |
MOSFET MOSFT 100V 100A 9.0mOhm 65nC Qg |
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