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IRFH5207TRPBF

IRFH5207TRPBF Infineon / IR


irfh5207pbf-1228244.pdf Hersteller: Infineon / IR
MOSFET 75V 1 N-CH HEXFET 9.6mOhms 39nC
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Technische Details IRFH5207TRPBF Infineon / IR

Description: MOSFET N-CH 75V 13A/71A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc), Rds On (Max) @ Id, Vgs: 9.6mOhm @ 43A, 10V, Power Dissipation (Max): 3.6W (Ta), 105W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2474 pF @ 25 V.

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IRFH5207TRPBF IRFH5207TRPBF Hersteller : Infineon Technologies irfh5207pbf.pdf?fileId=5546d462533600a40153561b05871eae Description: MOSFET N-CH 75V 13A/71A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 43A, 10V
Power Dissipation (Max): 3.6W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2474 pF @ 25 V
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