IRFH7110TRPBF Infineon Technologies
auf Bestellung 1940 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 642+ | 0.87 EUR |
| 1000+ | 0.80 EUR |
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Technische Details IRFH7110TRPBF Infineon Technologies
Description: MOSFET N-CH 100V 11A/58A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-TQFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 35A, 10V, Power Dissipation (Max): 3.6W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V.
Weitere Produktangebote IRFH7110TRPBF nach Preis ab 0.91 EUR bis 0.91 EUR
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IRFH7110TRPBF | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 100V 11A/58A 8PQFNPackaging: Bulk Package / Case: 8-TQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH7110TRPBF | Hersteller : Infineon / IR |
MOSFET MOSFET, 100V, 58A 13.5 mOhm, 58 nC Qg |
auf Bestellung 3300 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH7110TRPBF | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IRFH7110TRPBF - IRFH7110 100V SINGLE N-CHANNEL HEXFET P tariffCode: 85423990 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 940 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFH7110TRPBF Транзисторы |
auf Bestellung 104 Stücke: Lieferzeit 7-21 Tag (e) |
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IRFH7110TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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IRFH7110TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 11A/58A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-TQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFH7110TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |