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IRFH7921TRPBF

IRFH7921TRPBF Infineon Technologies

irfh7921pbf.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 15A 8-Pin PQFN T/R
auf Bestellung 14180 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
788+0.68 EUR
1000+0.6 EUR
10000+0.52 EUR
Mindestbestellmenge: 788
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Technische Details IRFH7921TRPBF Infineon Technologies

Description: MOSFET N-CH 30V 15A/34A PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 34A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 2.35V @ 25µA, Supplier Device Package: PQFN (5x6) Single Die, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V.

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IRFH7921TRPBF IRFH7921TRPBF Hersteller : Infineon Technologies irfh7921pbf.pdf Trans MOSFET N-CH 30V 15A 8-Pin PQFN T/R
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
788+0.68 EUR
1000+0.6 EUR
Mindestbestellmenge: 788
Im Einkaufswagen  Stück im Wert von  UAH
IRFH7921TRPBF IRFH7921TRPBF Hersteller : Infineon / IR irfh7921pbf-1227524.pdf MOSFET 30V 1 N-CH HEXFET 8.5mOhms 9.3nC
auf Bestellung 5362 Stücke:
Lieferzeit 10-14 Tag (e)
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IRFH7921TRPBF IRFH7921TRPBF Hersteller : Infineon Technologies IRFH7921PBF.pdf Description: MOSFET N-CH 30V 15A/34A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6) Single Die
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
Produkt ist nicht verfügbar
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IRFH7921TRPBF IRFH7921TRPBF Hersteller : Infineon Technologies IRFH7921PBF.pdf Description: MOSFET N-CH 30V 15A/34A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6) Single Die
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
Produkt ist nicht verfügbar
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IRFH7921TRPBF IRFH7921TRPBF Hersteller : INFINEON TECHNOLOGIES irfh7921pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 34A; 3.1W; PQFN8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 34A
Power dissipation: 3.1W
Case: PQFN8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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