IRFH8321TRPBF Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N CH 30V 21A PQFN5X6
Packaging: Bulk
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 83A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 10V
Power Dissipation (Max): 3.4W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
auf Bestellung 1546 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 775+ | 0.6 EUR |
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Technische Details IRFH8321TRPBF Infineon Technologies
Description: MOSFET N CH 30V 21A PQFN5X6, Packaging: Tape & Reel (TR), Package / Case: 8-TQFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 83A (Tc), Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 10V, Power Dissipation (Max): 3.4W (Ta), 54W (Tc), Vgs(th) (Max) @ Id: 2V @ 50µA, Supplier Device Package: PQFN (5x6), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V.
Weitere Produktangebote IRFH8321TRPBF nach Preis ab 0.54 EUR bis 0.61 EUR
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IRFH8321TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 21A 8-Pin QFN EP T/R |
auf Bestellung 1546 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFH8321TRPBF | Hersteller : Infineon / IR |
MOSFET MOSFET, 30V, 25A, 4 4.7nC Qg, PQFN5x6 |
auf Bestellung 3660 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH8321TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N CH 30V 21A PQFN5X6 Packaging: Tape & Reel (TR) Package / Case: 8-TQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 83A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 10V Power Dissipation (Max): 3.4W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: PQFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V |
Produkt ist nicht verfügbar |
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IRFH8321TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N CH 30V 21A PQFN5X6 Packaging: Cut Tape (CT) Package / Case: 8-TQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 83A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 10V Power Dissipation (Max): 3.4W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: PQFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V |
Produkt ist nicht verfügbar |