Technische Details IRFH8337TR2PBF Infineon / IR
Description: MOSFET N-CH 30V 9.7A 5X6 PQFN, Packaging: Cut Tape (CT), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc), Rds On (Max) @ Id, Vgs: 12.8mOhm @ 16.2A, 10V, Vgs(th) (Max) @ Id: 2.35V @ 25µA, Supplier Device Package: PQFN (5x6), Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 10 V.
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IRFH8337TR2PBF Produktcode: 98279
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IRFH8337TR2PBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 12A 8-Pin QFN EP T/R |
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IRFH8337TR2PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 9.7A 5X6 PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 12.8mOhm @ 16.2A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: PQFN (5x6) Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 10 V |
Produkt ist nicht verfügbar |