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IRFHM4231TRPBF

IRFHM4231TRPBF Infineon / IR


irfhm4231pbf-1227398.pdf Hersteller: Infineon / IR
MOSFET 25V Single N-Ch HEXFET PWR 50A
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Technische Details IRFHM4231TRPBF Infineon / IR

Description: MOSFET N-CH 25V 40A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V, Power Dissipation (Max): 2.7W (Ta), 29W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 35µA, Supplier Device Package: 8-PQFN (3x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 13 V.

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IRFHM4231TRPBF IRFHM4231TRPBF Hersteller : Infineon Technologies irfhm4231pbf.pdf?fileId=5546d462533600a40153562001cd1f2f Description: MOSFET N-CH 25V 40A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.7W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: 8-PQFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 13 V
Produkt ist nicht verfügbar
IRFHM4231TRPBF IRFHM4231TRPBF Hersteller : Infineon Technologies irfhm4231pbf.pdf?fileId=5546d462533600a40153562001cd1f2f Description: MOSFET N-CH 25V 40A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.7W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: 8-PQFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 13 V
Produkt ist nicht verfügbar