Technische Details IRFHM4234TRPBF Infineon Technologies
Description: HEXFET POWER MOSFET, Packaging: Bulk, Package / Case: 8-TQFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V, Power Dissipation (Max): 2.8W (Ta), 28W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 25µA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1011 pF @ 13 V.
Weitere Produktangebote IRFHM4234TRPBF nach Preis ab 0.68 EUR bis 0.86 EUR
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IRFHM4234TRPBF | International Rectifier |
 Description: HEXFET POWER MOSFETPackaging: Bulk Package / Case: 8-TQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 25µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1011 pF @ 13 V |
auf Bestellung 1122 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFHM4234TRPBF | Infineon Technologies |
MOSFET 25V Single N-Ch HEXFET PWR 50A |
auf Bestellung 4394 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||
| IRFHM4234TRPBF | International Rectifier HiRel Products |
Trans MOSFET N-CH 25V 20A 8-Pin PQFN EP T/R |
auf Bestellung 1122 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFHM4234TRPBF |
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Hersteller: International Rectifier
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1011 pF @ 13 V
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1011 pF @ 13 V
auf Bestellung 1122 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 525+ | 0.86 EUR |
| IRFHM4234TRPBF |
|
Hersteller: Infineon Technologies
MOSFET 25V Single N-Ch HEXFET PWR 50A
MOSFET 25V Single N-Ch HEXFET PWR 50A
auf Bestellung 4394 Stücke:
Lieferzeit 10-14 Tag (e)
| IRFHM4234TRPBF |
|
Hersteller: International Rectifier HiRel Products
Trans MOSFET N-CH 25V 20A 8-Pin PQFN EP T/R
Trans MOSFET N-CH 25V 20A 8-Pin PQFN EP T/R
auf Bestellung 1122 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 729+ | 0.75 EUR |
| 1000+ | 0.68 EUR |