IRFHM4234TRPBF International Rectifier
Hersteller: International RectifierDescription: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1011 pF @ 13 V
auf Bestellung 1122 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 770+ | 0.63 EUR |
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Technische Details IRFHM4234TRPBF International Rectifier
Description: HEXFET POWER MOSFET, Packaging: Bulk, Package / Case: 8-TQFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V, Power Dissipation (Max): 2.8W (Ta), 28W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 25µA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1011 pF @ 13 V.
Weitere Produktangebote IRFHM4234TRPBF nach Preis ab 0.76 EUR bis 0.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||
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