IRFHM792TR2PBF
Hersteller: IRFHM792TR2PBF Транзисторы HEXFET
auf Bestellung 11 Stücke:
Lieferzeit 7-21 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFHM792TR2PBF
Description: MOSFET 2N-CH 100V 2.3A 8PQFN, Packaging: Cut Tape (CT), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Technology: MOSFET (Metal Oxide), Power - Max: 2.3W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 2.3A, Input Capacitance (Ciss) (Max) @ Vds: 251pF @ 25V, Rds On (Max) @ Id, Vgs: 195mOhm @ 2.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 10µA, Supplier Device Package: 8-PQFN-Dual (3.3x3.3).
Weitere Produktangebote IRFHM792TR2PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IRFHM792TR2PBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 2.3A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
|
 |
IRFHM792TR2PBF | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 100V 2.3A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.3A Input Capacitance (Ciss) (Max) @ Vds: 251pF @ 25V Rds On (Max) @ Id, Vgs: 195mOhm @ 2.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Vgs(th) (Max) @ Id: 4V @ 10µA Supplier Device Package: 8-PQFN-Dual (3.3x3.3) |
Produkt ist nicht verfügbar |