IRFHM792TRPBF Infineon / IR

Description: MOSFET 2N-CH 100V 2.3A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.3W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 2.3A, Input Capacitance (Ciss) (Max) @ Vds: 251pF @ 25V, Rds On (Max) @ Id, Vgs: 195mOhm @ 2.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 10µA, Supplier Device Package: 8-PQFN (3.3x3.3), Power33.