| Anzahl | Preis |
|---|---|
| 2+ | 2.11 EUR |
| 10+ | 1.9 EUR |
| 100+ | 1.47 EUR |
| 500+ | 1.22 EUR |
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Technische Details IRFHM792TRPBF Infineon / IR
Description: MOSFET 2N-CH 100V 2.3A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.3W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 2.3A, Input Capacitance (Ciss) (Max) @ Vds: 251pF @ 25V, Rds On (Max) @ Id, Vgs: 195mOhm @ 2.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 10µA, Supplier Device Package: 8-PQFN (3.3x3.3), Power33.
Weitere Produktangebote IRFHM792TRPBF nach Preis ab 0.84 EUR bis 0.84 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| IRFHM792TRPBF | Hersteller : International Rectifier HiRel Products |
 Trans MOSFET N-CH 100V 2.3A 8-Pin PQFN EP T/R |
auf Bestellung 659 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFHM792TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 100V 2.3A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.3A Input Capacitance (Ciss) (Max) @ Vds: 251pF @ 25V Rds On (Max) @ Id, Vgs: 195mOhm @ 2.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Vgs(th) (Max) @ Id: 4V @ 10µA Supplier Device Package: 8-PQFN (3.3x3.3), Power33 |
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