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IRFHM8329TRPBF

IRFHM8329TRPBF Infineon Technologies


100029510881261irfhm8329pbf.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 16A 8-Pin PQFN EP T/R
auf Bestellung 2622 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
1316+0.41 EUR
Mindestbestellmenge: 1316
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IRFHM8329TRPBF Infineon Technologies

Description: MOSFET N-CH 30V 16A/57A PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 57A (Tc), Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V, Power Dissipation (Max): 2.6W (Ta), 33W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 25µA, Supplier Device Package: PQFN (3x3), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 10 V.

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IRFHM8329TRPBF IRFHM8329TRPBF Hersteller : Infineon Technologies irfhm8329pbf.pdf?fileId=5546d462533600a4015356234f3d1f4d Description: MOSFET N-CH 30V 16A/57A PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 25µA
Supplier Device Package: PQFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 10 V
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
480+0.47 EUR
Mindestbestellmenge: 480
Im Einkaufswagen  Stück im Wert von  UAH
IRFHM8329TRPBF IRFHM8329TRPBF Hersteller : Infineon / IR irfhm8329pbf-1228251.pdf MOSFET MOSFET, 30V, 25A, 4 3nC Qg, PQFN 3.3x3.3
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IRFHM8329TRPBF IRFHM8329TRPBF Hersteller : Infineon Technologies 100029510881261irfhm8329pbf.pdf Trans MOSFET N-CH 30V 16A 8-Pin PQFN EP T/R
Produkt ist nicht verfügbar
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IRFHM8329TRPBF IRFHM8329TRPBF Hersteller : Infineon Technologies 100029510881261irfhm8329pbf.pdf Trans MOSFET N-CH 30V 16A 8-Pin PQFN EP T/R
Produkt ist nicht verfügbar
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IRFHM8329TRPBF IRFHM8329TRPBF Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCD1B98B2BF5EA&compId=IRFHM8329TRPBF.pdf?ci_sign=beb2593dcf1d1cccb9082c5760a87532530f3112 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.6W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 2.6W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IRFHM8329TRPBF IRFHM8329TRPBF Hersteller : Infineon Technologies irfhm8329pbf.pdf?fileId=5546d462533600a4015356234f3d1f4d Description: MOSFET N-CH 30V 16A/57A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 25µA
Supplier Device Package: PQFN (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFHM8329TRPBF IRFHM8329TRPBF Hersteller : Infineon Technologies irfhm8329pbf.pdf?fileId=5546d462533600a4015356234f3d1f4d Description: MOSFET N-CH 30V 16A/57A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 25µA
Supplier Device Package: PQFN (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFHM8329TRPBF IRFHM8329TRPBF Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCD1B98B2BF5EA&compId=IRFHM8329TRPBF.pdf?ci_sign=beb2593dcf1d1cccb9082c5760a87532530f3112 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.6W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 2.6W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH