IRFHM8329TRPBF Infineon / IR
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Technische Details IRFHM8329TRPBF Infineon / IR
Description: MOSFET N-CH 30V 16A/57A PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 57A (Tc), Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V, Power Dissipation (Max): 2.6W (Ta), 33W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 25µA, Supplier Device Package: PQFN (3x3), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 10 V.
Weitere Produktangebote IRFHM8329TRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRFHM8329TRPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 30V 16A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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IRFHM8329TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 16A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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IRFHM8329TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.6W; PQFN3.3X3.3 Mounting: SMD Drain-source voltage: 30V Drain current: 16A Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Case: PQFN3.3X3.3 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRFHM8329TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 16A/57A PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 57A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V Power Dissipation (Max): 2.6W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 25µA Supplier Device Package: PQFN (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 10 V |
Produkt ist nicht verfügbar |
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IRFHM8329TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 16A/57A PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 57A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V Power Dissipation (Max): 2.6W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 25µA Supplier Device Package: PQFN (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 10 V |
Produkt ist nicht verfügbar |
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IRFHM8329TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.6W; PQFN3.3X3.3 Mounting: SMD Drain-source voltage: 30V Drain current: 16A Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Case: PQFN3.3X3.3 |
Produkt ist nicht verfügbar |