IRFHM8330TRPBF Infineon Technologies
auf Bestellung 2676 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details IRFHM8330TRPBF Infineon Technologies
Description: MOSFET N-CH 30V 16A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V, Power Dissipation (Max): 2.7W (Ta), 33W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 25µA, Supplier Device Package: 8-PQFN (3.3x3.3), Power33, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V.
Weitere Produktangebote IRFHM8330TRPBF nach Preis ab 2.21 EUR bis 2.5 EUR
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| IRFHM8330TRPBF | Hersteller : Infineon |
 Транз. Пол. ММ N-MOSFET PQFN-8 SO8 Udss=30V; Id=16A; Pdmax=2,7W; Rds=0,0077 Ohm |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFHM8330TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 16A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V Power Dissipation (Max): 2.7W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFHM8330TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 16A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V Power Dissipation (Max): 2.7W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V |
Produkt ist nicht verfügbar |