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Technische Details IRFHM8337TRPBF Infineon / IR
Description: MOSFET N-CH 30V 12A 8PQFN, Power Dissipation (Max): 2.8W (Ta), 25W (Tc), Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-PQFN (3.3x3.3), Power33, Vgs(th) (Max) @ Id: 2.35V @ 25µA.
Weitere Produktangebote IRFHM8337TRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IRFHM8337TRPBF | Infineon Technologies |
 Description: MOSFET N-CH 30V 12A 8PQFNPower Dissipation (Max): 2.8W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Vgs(th) (Max) @ Id: 2.35V @ 25µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRFHM8337TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 12A 8PQFN Current - Continuous Drain (Id) @ 25°C: 12A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Vgs(th) (Max) @ Id: 2.35V @ 25µA Power Dissipation (Max): 2.8W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRFHM8337TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 12A 8PQFN
Power Dissipation (Max): 2.8W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Description: MOSFET N-CH 30V 12A 8PQFN
Power Dissipation (Max): 2.8W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFHM8337TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 12A 8PQFN
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.8W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V
Description: MOSFET N-CH 30V 12A 8PQFN
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.8W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH