IRFHM8337TRPBF Infineon / IR

Description: MOSFET N-CH 30V 12A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V, Power Dissipation (Max): 2.8W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 25µA, Supplier Device Package: 8-PQFN (3.3x3.3), Power33, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V.