IRFHM8363TRPBF Infineon Technologies
| Anzahl | Preis |
|---|---|
| 2+ | 1.72 EUR |
| 10+ | 1.42 EUR |
| 100+ | 1.1 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.76 EUR |
| 2000+ | 0.71 EUR |
| 4000+ | 0.68 EUR |
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Technische Details IRFHM8363TRPBF Infineon Technologies
Description: MOSFET 2N-CH 30V 11A 8PQFN, Part Status: Not For New Designs, Supplier Device Package: 8-PQFN (3.3x3.3), Power33, Vgs(th) (Max) @ Id: 2.35V @ 25µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 11A, Drain to Source Voltage (Vdss): 30V, Power - Max: 2.7W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote IRFHM8363TRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| IRFHM8363TRPBF | Infineon |
 MOSFET 2N-CH 30V 11A 8PQFN Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| IRFHM8363TRPBF | VBSEMI |
MOSFET 2N-CH 30V 11A 8PQFN Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
IRFHM8363TRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 30V 11A 8PQFN Part Status: Not For New Designs Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Vgs(th) (Max) @ Id: 2.35V @ 25µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V Current - Continuous Drain (Id) @ 25°C: 11A Drain to Source Voltage (Vdss): 30V Power - Max: 2.7W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
IRFHM8363TRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 30V 11A 8PQFN Part Status: Not For New Designs Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Vgs(th) (Max) @ Id: 2.35V @ 25µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V Current - Continuous Drain (Id) @ 25°C: 11A Drain to Source Voltage (Vdss): 30V Power - Max: 2.7W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRFHM8363TRPBF |
|
Hersteller: Infineon
MOSFET 2N-CH 30V 11A 8PQFN Транзистори
MOSFET 2N-CH 30V 11A 8PQFN Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFHM8363TRPBF |
|
Hersteller: VBSEMI
MOSFET 2N-CH 30V 11A 8PQFN Транзистори
MOSFET 2N-CH 30V 11A 8PQFN Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFHM8363TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 11A 8PQFN
Part Status: Not For New Designs
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 2.35V @ 25µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 11A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 11A 8PQFN
Part Status: Not For New Designs
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 2.35V @ 25µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 11A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFHM8363TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 11A 8PQFN
Part Status: Not For New Designs
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 2.35V @ 25µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 11A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 11A 8PQFN
Part Status: Not For New Designs
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 2.35V @ 25µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 11A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH