IRFI1010NPBF-IR International Rectifier

Description: HEXFET POWER MOSFET, Packaging: Bulk, Current - Continuous Drain (Id) @ 25°C: 49A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220AB Full-Pak, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 58W (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 26A, 10V.