
IRFI740GLCPBF Vishay Semiconductors
auf Bestellung 4665 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 6.83 EUR |
10+ | 5.26 EUR |
25+ | 4.19 EUR |
100+ | 3.82 EUR |
500+ | 3.80 EUR |
1000+ | 3.08 EUR |
2000+ | 3.04 EUR |
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Technische Details IRFI740GLCPBF Vishay Semiconductors
Description: MOSFET N-CH 400V 5.7A TO220-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc), Rds On (Max) @ Id, Vgs: 550mOhm @ 3.4A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V.
Weitere Produktangebote IRFI740GLCPBF nach Preis ab 3.52 EUR bis 7.48 EUR
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IRFI740GLCPBF | Hersteller : Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 3.4A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
auf Bestellung 254 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFI740GLCPBF | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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IRFI740GLCPBF | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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IRFI740GLCPBF | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.7A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 23A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRFI740GLCPBF | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.7A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 23A |
Produkt ist nicht verfügbar |