Technische Details IRFI830GPBF Vishay
Description: MOSFET N-CH 500V 3.1A TO220-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.9A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V.
Weitere Produktangebote IRFI830GPBF nach Preis ab 1.08 EUR bis 4.1 EUR
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IRFI830GPBF | Vishay |
 Trans MOSFET N-CH 500V 3.1A 3-Pin(3+Tab) TO-220FP |
auf Bestellung 665 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFI830GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2A Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 38nC Power dissipation: 35W |
auf Bestellung 112 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFI830GPBF | Vishay |
Trans MOSFET N-CH 500V 3.1A 3-Pin(3+Tab) TO-220FP |
auf Bestellung 113 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFI830GPBF | Vishay Siliconix |
Description: MOSFET N-CH 500V 3.1A TO220-3 Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.9A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V |
auf Bestellung 148 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFI830GPBF | Vishay Semiconductors |
MOSFETs RECOMMENDED ALT IRFI |
auf Bestellung 159 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFI830GPBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 500V 3.1A 3-Pin(3+Tab) TO-220FP
Trans MOSFET N-CH 500V 3.1A 3-Pin(3+Tab) TO-220FP
auf Bestellung 665 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 94+ | 1.57 EUR |
| 108+ | 1.31 EUR |
| 119+ | 1.15 EUR |
| 500+ | 1.08 EUR |
| IRFI830GPBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 38nC
Power dissipation: 35W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 38nC
Power dissipation: 35W
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 34+ | 2.12 EUR |
| 46+ | 1.57 EUR |
| 52+ | 1.4 EUR |
| 100+ | 1.32 EUR |
| IRFI830GPBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 500V 3.1A 3-Pin(3+Tab) TO-220FP
Trans MOSFET N-CH 500V 3.1A 3-Pin(3+Tab) TO-220FP
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 56+ | 2.64 EUR |
| 63+ | 2.32 EUR |
| 100+ | 2.15 EUR |
| IRFI830GPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 3.1A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.9A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
Description: MOSFET N-CH 500V 3.1A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.9A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
auf Bestellung 148 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.77 EUR |
| 10+ | 2.43 EUR |
| 100+ | 1.66 EUR |
| IRFI830GPBF |
|
Hersteller: Vishay Semiconductors
MOSFETs RECOMMENDED ALT IRFI
MOSFETs RECOMMENDED ALT IRFI
auf Bestellung 159 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.1 EUR |
| 10+ | 2.46 EUR |
| 100+ | 1.81 EUR |
| 500+ | 1.64 EUR |
| 1000+ | 1.44 EUR |
| 2000+ | 1.36 EUR |
| 5000+ | 1.27 EUR |