IRFI9610GPBF Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 200V 2A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.2A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
auf Bestellung 905 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.92 EUR |
| 10+ | 2.81 EUR |
| 100+ | 1.94 EUR |
| 500+ | 1.56 EUR |
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Technische Details IRFI9610GPBF Vishay Siliconix
Description: MOSFET P-CH 200V 2A TO220-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 1.2A, 10V, Power Dissipation (Max): 27W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V.
Weitere Produktangebote IRFI9610GPBF nach Preis ab 1.32 EUR bis 3.98 EUR
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IRFI9610GPBF | Hersteller : Vishay / Siliconix |
MOSFETs TO220 200V 2A P-CH MOSFET |
auf Bestellung 679 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFI9610GPBF | Hersteller : IR |
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auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFI9610GPBF | Hersteller : Vishay |
Trans MOSFET P-CH 200V 2A 3-Pin(3+Tab) TO-220FP |
Produkt ist nicht verfügbar |
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| IRFI9610GPBF | Hersteller : VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2A; Idm: -8A; 27W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2A Pulsed drain current: -8A Power dissipation: 27W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |