auf Bestellung 324 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 253+ | 0.59 EUR |
| 255+ | 0.57 EUR |
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Technische Details IRFIB5N65APBF Vishay
Description: MOSFET N-CH 650V 5.1A TO220-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc), Rds On (Max) @ Id, Vgs: 930mOhm @ 3.1A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V.
Weitere Produktangebote IRFIB5N65APBF nach Preis ab 0.57 EUR bis 0.59 EUR
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IRFIB5N65APBF | Hersteller : Vishay |
 Trans MOSFET N-CH 650V 5.1A 3-Pin(3+Tab) TO-220FP |
auf Bestellung 324 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFIB5N65APBF | Hersteller : IR |
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auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRFIB5N65APBF | Hersteller : VISHAY |
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auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFIB5N65APBF | Hersteller : Vishay |
Trans MOSFET N-CH 650V 5.1A 3-Pin(3+Tab) TO-220FP |
Produkt ist nicht verfügbar |
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| IRFIB5N65APBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 5.1A; Idm: 21A; 60W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5.1A Pulsed drain current: 21A Power dissipation: 60W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 930mΩ Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRFIB5N65APBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 650V 5.1A TO220-3 Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Rds On (Max) @ Id, Vgs: 930mOhm @ 3.1A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFIB5N65APBF | Hersteller : Vishay Semiconductors |
MOSFETs TO220 650V 5.1A N-CH MOSFET |
Produkt ist nicht verfügbar |
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| IRFIB5N65APBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 5.1A; Idm: 21A; 60W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5.1A Pulsed drain current: 21A Power dissipation: 60W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 930mΩ Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |