
IRFIZ48NPBF Infineon Technologies
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
376+ | 1.48 EUR |
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Technische Details IRFIZ48NPBF Infineon Technologies
Description: MOSFET N-CH 55V 40A TO220AB FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 22A, 10V, Power Dissipation (Max): 54W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB Full-Pak, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V.
Weitere Produktangebote IRFIZ48NPBF
Foto | Bezeichnung | Hersteller | Beschreibung |
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IRFIZ48NPBF | Hersteller : Infineon / IR |
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auf Bestellung 4929 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFIZ48NPBF | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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IRFIZ48NPBF | Hersteller : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 22A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Full-Pak Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFIZ48NPBF | Hersteller : Vishay / Siliconix |
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Produkt ist nicht verfügbar |